IXYS SIC SCHOTTKY Diodes; Littelfuse has added two new products to its already expanding 2nd generation 650V, AEC-Q101 certified Silicon Carbide Schottky Diode family.
Both series offer the power electronics system designers the advantages of negligible leakage current, high surge capability and the ability to operate at a junction temperature of 175°C, unlike the conventional silicon-based products. So, these products are ideal for projects where high efficiency, thermal factors and reliability are essential.
The LSIC2SD065DxxA Series SiC Schottky diodes are offered as 6A, 10A or 16A variants in TO263-2L case, and the LSIC2SD065ExxCCA Series SiC Schottky Diodes are offered as 12A, 16A, 20A or 40A variants in TO-247-3L case. These SiC Schottky Diodes emit less energy and they can work at higher temperatures than silicon power diodes. Also, they can be used with a smaller cooler, thus more compact systems can be obtained.
IXYS SIC SCHOTTKY Diodes
Areas of use of these new 650V SiC Schottky Diodes
- Electric vehicle charging stations
- In Buck/Boost circuits in Dc-Dc converters
- As a Free-Wheeling Diode in inverter circuits
- Power factor correction applications (PFC)
Important advantages of the new 650V SiC Schottky Diodes (IXYS SIC SCHOTTKY Diodes)
- Design flexibility with TO263-2L and TO-247-3L cases
- AEC-Q101 quality certificate
- Suitable for high frequency power switching
- Safe operation and ease of parallelization to reduce the pressure on the switch on the opposite side
- 175°C junction operating temperature
